IndiumV3, Chine, Analysis, bibRecord, 000596

Cu2ZnSnS4 solar cell prepared entirely by non-vacuum processes

Identifieur interne : 000596 ( Chine/Analysis ); précédent : 000595; suivant : 000597

Cu2ZnSnS4 solar cell prepared entirely by non-vacuum processes

Auteurs : RBID : Pascal:12-0311423

Descripteurs français

Pascal (Inist)
- Cellule solaire, Structure cellulaire, Addition fluor, Addition étain, Verre, Carbone, Couche tampon, Electrode carbone, Couche mince, Dépôt projection, Impression, Densité courant, Sulfure d'hydrogène, Cuivre Etain Zinc Sulfure Mixte, Sulfure d'indium, Oxyde de titane, Sulfure de cadmium, Cu2ZnSnS4, In2S3, TiO2, CdS, 8460J, 8245F, 8115R.
Wicri :
- concept : Verre, Carbone.

English descriptors

KwdEn :
- Buffer layer, Cadmium sulfide, Carbon, Carbon electrode, Cell structure, Copper Tin Zinc Sulfides Mixed, Current density, Fluorine addition, Glass, Hydrogen sulfides, Indium sulfide, Printing, Solar cell, Spray coating, Thin film, Tin addition, Titanium oxide.

Abstract

Cu₂ZnSnS₄ (CZTS) solar cell with superstrate structure of fluorine-doped tin oxide glass/riO₂/In₂S₃/CZTS/Carbon was prepared entirely by non-vacuum processes. The compact TiO₂ window and In₂S₃ buffer layers, CZTS absorber layer and Carbon electrode layer were prepared by spray pyrolysis method, ball milling and screen printing combination processes and screen printing process, respectively. The short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the best fabricated solar cell are 8.76 mA/cm², 250 mV, 0.27 and 0.6%, respectively. The fabrication process for the CZTS solar cell did not employ any vacuum conditions or high-toxic materials (such as CdS, H₂Se, H₂S or Se).

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001A48
to stream Main, to step Repository: 001E77
to stream Chine, to step Extraction: 000596

Links to Exploration step

Pascal:12-0311423

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Cu<sub>2</sub>
ZnSnS<sub>4</sub>
 solar cell prepared entirely by non-vacuum processes</title>
<author><name>QINMIAO CHEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road</s1>
<s2>Shanghai200093</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai200093</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Minhang District</s1>
<s2>Shanghai 200240</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200240</wicri:noRegion>
</affiliation>
</author>
<author><name>SHUYI CHENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road</s1>
<s2>Shanghai200093</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai200093</wicri:noRegion>
</affiliation>
</author>
<author><name>SONGLIN ZHUANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road</s1>
<s2>Shanghai200093</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai200093</wicri:noRegion>
</affiliation>
</author>
<author><name>XIAOMING DOU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road</s1>
<s2>Shanghai200093</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai200093</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Minhang District</s1>
<s2>Shanghai 200240</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200240</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Consolidated Research Institute for Advanced Science and Medical Care, Waseda University, 513 Wasedatsurumaki-cho</s1>
<s2>Shinjuku-ku, Tokyo 162-0041</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Shinjuku-ku, Tokyo 162-0041</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0311423</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0311423 INIST</idno>
<idno type="RBID">Pascal:12-0311423</idno>
<idno type="wicri:Area/Main/Corpus">001A48</idno>
<idno type="wicri:Area/Main/Repository">001E77</idno>
<idno type="wicri:Area/Chine/Extraction">000596</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term>
<term>Cadmium sulfide</term>
<term>Carbon</term>
<term>Carbon electrode</term>
<term>Cell structure</term>
<term>Copper Tin Zinc Sulfides Mixed</term>
<term>Current density</term>
<term>Fluorine addition</term>
<term>Glass</term>
<term>Hydrogen sulfides</term>
<term>Indium sulfide</term>
<term>Printing</term>
<term>Solar cell</term>
<term>Spray coating</term>
<term>Thin film</term>
<term>Tin addition</term>
<term>Titanium oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Structure cellulaire</term>
<term>Addition fluor</term>
<term>Addition étain</term>
<term>Verre</term>
<term>Carbone</term>
<term>Couche tampon</term>
<term>Electrode carbone</term>
<term>Couche mince</term>
<term>Dépôt projection</term>
<term>Impression</term>
<term>Densité courant</term>
<term>Sulfure d'hydrogène</term>
<term>Cuivre Etain Zinc Sulfure Mixte</term>
<term>Sulfure d'indium</term>
<term>Oxyde de titane</term>
<term>Sulfure de cadmium</term>
<term>Cu2ZnSnS4</term>
<term>In2S3</term>
<term>TiO2</term>
<term>CdS</term>
<term>8460J</term>
<term>8245F</term>
<term>8115R</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term>
<term>Carbone</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Cu<sub>2</sub>
ZnSnS<sub>4</sub>
 (CZTS) solar cell with superstrate structure of fluorine-doped tin oxide glass/riO<sub>2</sub>
/In<sub>2</sub>
S<sub>3</sub>
/CZTS/Carbon was prepared entirely by non-vacuum processes. The compact TiO<sub>2</sub>
 window and In<sub>2</sub>
S<sub>3</sub>
 buffer layers, CZTS absorber layer and Carbon electrode layer were prepared by spray pyrolysis method, ball milling and screen printing combination processes and screen printing process, respectively. The short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the best fabricated solar cell are 8.76 mA/cm<sup>2</sup>
, 250 mV, 0.27 and 0.6%, respectively. The fabrication process for the CZTS solar cell did not employ any vacuum conditions or high-toxic materials (such as CdS, H<sub>2</sub>
Se, H<sub>2</sub>
S or Se).</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>520</s2>
</fA05>
<fA06><s2>19</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Cu<sub>2</sub>
ZnSnS<sub>4</sub>
 solar cell prepared entirely by non-vacuum processes</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>QINMIAO CHEN</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SHUYI CHENG</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SONGLIN ZHUANG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>XIAOMING DOU</s1>
</fA11>
<fA14 i1="01"><s1>Shanghai Key Laboratory of Modern Optics System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road</s1>
<s2>Shanghai200093</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Minhang District</s1>
<s2>Shanghai 200240</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Consolidated Research Institute for Advanced Science and Medical Care, Waseda University, 513 Wasedatsurumaki-cho</s1>
<s2>Shinjuku-ku, Tokyo 162-0041</s2>
<s3>JPN</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>6256-6261</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000506638980370</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>33 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0311423</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Cu<sub>2</sub>
ZnSnS<sub>4</sub>
 (CZTS) solar cell with superstrate structure of fluorine-doped tin oxide glass/riO<sub>2</sub>
/In<sub>2</sub>
S<sub>3</sub>
/CZTS/Carbon was prepared entirely by non-vacuum processes. The compact TiO<sub>2</sub>
 window and In<sub>2</sub>
S<sub>3</sub>
 buffer layers, CZTS absorber layer and Carbon electrode layer were prepared by spray pyrolysis method, ball milling and screen printing combination processes and screen printing process, respectively. The short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the best fabricated solar cell are 8.76 mA/cm<sup>2</sup>
, 250 mV, 0.27 and 0.6%, respectively. The fabrication process for the CZTS solar cell did not employ any vacuum conditions or high-toxic materials (such as CdS, H<sub>2</sub>
Se, H<sub>2</sub>
S or Se).</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001C01H02</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15R</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>230</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Structure cellulaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Cell structure</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Estructura celular</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Addition fluor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Fluorine addition</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Adición fluor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Addition étain</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Tin addition</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Adición estaño</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Verre</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Glass</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Vidrio</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Carbone</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Carbon</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Carbono</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Couche tampon</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Buffer layer</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Capa tampón</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Electrode carbone</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Carbon electrode</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Electrodo carbono</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Thin film</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Dépôt projection</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Spray coating</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Depósito proyección</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Impression</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Printing</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Impresión</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Densité courant</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Current density</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Densidad corriente</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Sulfure d'hydrogène</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Hydrogen sulfides</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Cuivre Etain Zinc Sulfure Mixte</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Copper Tin Zinc Sulfides Mixed</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Cobre Estaño Zinc Sulfuro Mixto</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Oxyde de titane</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Titanium oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Titanio óxido</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Sulfure de cadmium</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Cadmium sulfide</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Cadmio sulfuro</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Cu2ZnSnS4</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>In2S3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>TiO2</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>CdS</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>8245F</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>8115R</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>240</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Cu2ZnSnS4 solar cell prepared entirely by non-vacuum processes

Cu2ZnSnS4 solar cell prepared entirely by non-vacuum processes

Descripteurs français

English descriptors

Abstract

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